FDMB2307NZ mosfet equivalent, dual common drain n-channel mosfet.
* Max rS1S2(on) = 16.5 mΩ at VGS = 4.5 V, ID = 8 A
* Max rS1S2(on) = 18 mΩ at VGS = 4.2 V, ID = 7.4 A
* Max rS1S2(on) = 21 mΩ at VGS = 3.1 V, ID = 7 A
* M.
It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced Power.
This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on Fairchild.
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